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型号:

HN3C51F-BL(TE85L,F

厂商: Toshiba
标准:
分类: 半导体分离式半导体
描述: transistors bipolar - bjt trans lfreq 120v npn npn 0.1A
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HN3C51F-BL(TE85L,F的详细信息

Manufacturer: Toshiba
Product Category: Transistors Bipolar - BJT
RoHS: Yes
Configuration: Dual
Transistor Polarity: NPN
Collector- Base Voltage VCBO: 120 V
Collector- Emitter Voltage VCEO Max: 120 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 0.3 V
Maximum DC Collector Current: 100 mA
Gain Bandwidth Product fT: 100 MHz
Mounting Style: SMD/SMT
Package / Case: SOT-26
Brand: Toshiba
Continuous Collector Current: 100 mA
DC Collector/Base Gain hfe Min: 200
DC Current Gain hFE Max: 700
Maximum Power Dissipation: 300 mW
Packaging: Reel
Factory Pack Quantity: 3000