Image HN2C01FEYTE85LF
型号:

HN2C01FEYTE85LF

厂商: Toshiba
标准:
分类: 半导体分离式半导体
描述: transistors bipolar - bjt trans lfreq 50v npn npn 0.15a
报错 收藏

Datasheet下载地址

厂商下载 >>

HN2C01FEYTE85LF的详细信息

Manufacturer: Toshiba
Product Category: Transistors Bipolar - BJT
RoHS: Yes
Configuration: Dual
Transistor Polarity: NPN
Collector- Base Voltage VCBO: 60 V
Collector- Emitter Voltage VCEO Max: 50 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 0.1 V
Maximum DC Collector Current: 150 mA
Gain Bandwidth Product fT: 60 MHz
Mounting Style: SMD/SMT
Package / Case: SOT-563
Brand: Toshiba
Continuous Collector Current: 150 mA
DC Collector/Base Gain hfe Min: 120
DC Current Gain hFE Max: 400
Maximum Power Dissipation: 100 mW
Packaging: Reel
Factory Pack Quantity: 3000

Title

Text