Image HN1A01FU-Y,LF
型号:

HN1A01FU-Y,LF

厂商: Toshiba
标准:
分类: 半导体分离式半导体
描述: transistors bipolar - bjt us6 pln transistor Pd=200mw F=1mhz
报错 收藏

Datasheet下载地址

本地下载 >> 厂商下载 >>

HN1A01FU-Y,LF的详细信息

Manufacturer: Toshiba
Product Category: Transistors Bipolar - BJT
RoHS: Yes
Transistor Polarity: PNP
Collector- Base Voltage VCBO: - 50 V
Collector- Emitter Voltage VCEO Max: - 50 V
Emitter- Base Voltage VEBO: - 5 V
Collector-Emitter Saturation Voltage: - 0.1 V
Maximum DC Collector Current: - 150 mA
Gain Bandwidth Product fT: 80 MHz
Mounting Style: SMD/SMT
Package / Case: US-6
Brand: Toshiba
Continuous Collector Current: - 150 mA
DC Collector/Base Gain hfe Min: 120
DC Current Gain hFE Max: 400
Maximum Power Dissipation: 200 mW
Packaging: Reel