Image HGTG30N60B3
型号:

HGTG30N60B3

厂商: Fairchild Semiconductor Fairchild Semiconductor
标准:
分类: 半导体分离式半导体
描述: igbt transistors 600v N-channel igbt ufs series
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HGTG30N60B3的详细信息

Manufacturer: Fairchild Semiconductor
Product Category: IGBT Transistors
RoHS: Yes
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.45 V
Maximum Gate Emitter Voltage: +/- 20 V
Continuous Collector Current at 25 C: 60 A
Gate-Emitter Leakage Current: +/- 250 nA
Power Dissipation: 208 W
Maximum Operating Temperature: + 150 C
Package / Case: TO-247-3
Packaging: Tube
Brand: Fairchild Semiconductor
Continuous Collector Current Ic Max: 60 A
Minimum Operating Temperature: - 55 C
Mounting Style: Through Hole
Series: HGTG30N60
Factory Pack Quantity: 30
Part # Aliases: HGTG30N60B3_NL
Unit Weight: 6.390 g

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