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Fairchild Semiconductor 
HGT1S20N60C3S9A的详细信息
| Manufacturer： | Fairchild Semiconductor |
|---|---|
| Product Category： | IGBT Transistors |
| RoHS： | Yes |
| Configuration： | Single |
| Collector- Emitter Voltage VCEO Max： | 600 V |
| Collector-Emitter Saturation Voltage： | 1.4 V |
| Maximum Gate Emitter Voltage： | +/- 20 V |
| Continuous Collector Current at 25 C： | 45 A |
| Gate-Emitter Leakage Current： | +/- 250 nA |
| Power Dissipation： | 164 W |
| Maximum Operating Temperature： | + 150 C |
| Package / Case： | TO-263AB-3 |
| Packaging： | Reel |
| Brand： | Fairchild Semiconductor |
| Continuous Collector Current Ic Max： | 45 A |
| Minimum Operating Temperature： | - 55 C |
| Mounting Style： | SMD/SMT |
| Series： | HGT1S20N60 |
| Factory Pack Quantity： | 800 |
| Unit Weight： | 1.312 g |
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