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Fairchild Semiconductor 
HGT1S10N120BNS的详细信息
| Datasheets： | |
|---|---|
| HGT(G,P)10N120BN, HGT1S10N120BNS： | |
| Product Photos： | |
| TO-263： | |
| Standard Package ： | 50 |
| Category： | Discrete Semiconductor Products |
| Family： | IGBTs - Single |
| Series： | - |
| Packaging ： | Tube |
| IGBT Type： | NPT |
| Voltage - Collector Emitter Breakdown (Max)： | 1200V |
| Current - Collector (Ic) (Max)： | 35A |
| Current - Collector Pulsed (Icm)： | 80A |
| Vce(on) (Max) @ Vge, Ic： | 2.7V @ 15V, 10A |
| Power - Max： | 298W |
| Switching Energy： | 320µJ (on), 800µJ (off) |
| Input Type： | Standard |
| Gate Charge： | 100nC |
| Td (on/off) @ 25°C： | 23ns/165ns |
| Test Condition： | 960V, 10A, 10 Ohm, 15V |
| Reverse Recovery Time (trr)： | - |
| Package / Case： | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type： | Surface Mount |
| Supplier Device Package： | TO-263AB |
| Other Names： | HGT1S10N120BNS-NDHGT1S10N120BNSFS |
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