型号:

GT30J121(Q)

厂商: Toshiba
标准:
分类: 半导体分离式半导体
描述: igbt transistors 600v/30a dis
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GT30J121(Q)的详细信息

Manufacturer: Toshiba
Product Category: IGBT Transistors
RoHS: Yes
Brand: Toshiba
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Maximum Gate Emitter Voltage: +/- 20 V
Continuous Collector Current at 25 C: 30 A
Maximum Operating Temperature: + 150 C
Package / Case: TO-3P
Continuous Collector Current Ic Max: 30 A
Minimum Operating Temperature: - 55 C
Mounting Style: Through Hole
Factory Pack Quantity: 50