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Fairchild Semiconductor 
FQPF8N60C的详细信息
| Datasheets： | |
|---|---|
| FQP8N60C, FQPF8N60C： | |
| Product Photos： | |
| TO-220AB： | |
| PCN Design/Specification： | |
| Passivation Material 26/June/2007： | |
| Standard Package ： | 1,000 |
| Category： | Discrete Semiconductor Products |
| Family： | FETs - Single |
| Series： | QFET® |
| Packaging ： | Tube |
| FET Type： | MOSFET N-Channel, Metal Oxide |
| FET Feature： | Standard |
| Drain to Source Voltage (Vdss)： | 600V |
| Current - Continuous Drain (Id) @ 25°C： | 7.5A (Tc) |
| Rds On (Max) @ Id, Vgs： | 1.2 Ohm @ 3.75A, 10V |
| Vgs(th) (Max) @ Id： | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs： | 36nC @ 10V |
| Input Capacitance (Ciss) @ Vds： | 1255pF @ 25V |
| Power - Max： | 48W |
| Mounting Type： | Through Hole |
| Package / Case： | TO-220-3 Full Pack |
| Supplier Device Package： | TO-220F |
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