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FQI8N60CTU的详细信息
Manufacturer: | Fairchild Semiconductor |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Vgs - Gate-Source Breakdown Voltage: | 30 V |
Id - Continuous Drain Current: | 7.5 A |
Rds On - Drain-Source Resistance: | 1.2 Ohms |
Configuration: | Single |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 3.13 W |
Mounting Style: | SMD/SMT |
Package / Case: | D2PAK-2 |
Packaging: | Tube |
Brand: | Fairchild Semiconductor |
Channel Mode: | Enhancement |
Fall Time: | 64.5 ns |
Forward Transconductance - Min: | 8.7 S |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 60.5 ns |
Series: | FQI8N60C |
Factory Pack Quantity: | 50 |
Typical Turn-Off Delay Time: | 81 ns |
Part # Aliases: | FQI8N60CTU_NL |
Unit Weight: | 2.084 g |
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