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Fairchild Semiconductor 
FQI5N50CTU的详细信息
| Datasheets： | |
|---|---|
| FQB5N50C, FQI5N50C： | |
| PCN Design/Specification： | |
| Passivation Material 14/May/2008： | |
| Standard Package ： | 1,000 |
| Category： | Discrete Semiconductor Products |
| Family： | FETs - Single |
| Series： | QFET® |
| Packaging ： | Tube |
| FET Type： | MOSFET N-Channel, Metal Oxide |
| FET Feature： | Standard |
| Drain to Source Voltage (Vdss)： | 500V |
| Current - Continuous Drain (Id) @ 25°C： | 5A (Tc) |
| Rds On (Max) @ Id, Vgs： | 1.4 Ohm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id： | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs： | 24nC @ 10V |
| Input Capacitance (Ciss) @ Vds： | 625pF @ 25V |
| Power - Max： | 73W |
| Mounting Type： | Through Hole |
| Package / Case： | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package： | I2PAK |
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