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型号: | FDMS3660S |
厂商: |
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标准: | ![]() ![]() |
分类: | 半导体 , 分离式半导体 |
描述: | mosfet powerstage dual N-Ch powertrench mosfet |
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FDMS3660S的详细信息
Manufacturer: | Fairchild Semiconductor |
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Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V, 12 V |
Id - Continuous Drain Current: | 13 A, 30 A |
Rds On - Drain-Source Resistance: | 8 mOhms, 1.8 mOhms |
Configuration: | Dual |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 2.2 W, 2.5 W |
Mounting Style: | SMD/SMT |
Package / Case: | Power 56-8 |
Packaging: | Reel |
Brand: | Fairchild Semiconductor |
Minimum Operating Temperature: | - 55 C |
Series: | FDMS3660 |
Factory Pack Quantity: | 3000 |
Unit Weight: | 171 mg |
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