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FDMQ8203的详细信息
Manufacturer: | Fairchild Semiconductor |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N and P-Channel |
Vds - Drain-Source Breakdown Voltage: | 100 V, - 80 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 6 A, - 6 A |
Rds On - Drain-Source Resistance: | 110 mOhms, 190 mOhms |
Configuration: | Dual |
Vgs th - Gate-Source Threshold Voltage: | 3 V, - 1.6 V |
Qg - Gate Charge: | 2.9 nC, 13 nC |
Maximum Operating Temperature: | + 125 C |
Pd - Power Dissipation: | 2.5 W |
Mounting Style: | SMD/SMT |
Package / Case: | MLP-12 |
Packaging: | Reel |
Brand: | Fairchild Semiconductor |
Fall Time: | 1.9 ns, 2.7 ns |
Forward Transconductance - Min: | 6 S |
Rise Time: | 1.3 ns, 2.8 ns |
Series: | FDMQ8203 |
Factory Pack Quantity: | 3000 |
Unit Weight: | 210 mg |
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