Image FDG6313N
型号:

FDG6313N

厂商: Fairchild Semiconductor Fairchild Semiconductor
标准:
分类: 半导体FET - 阵列
描述: mosfet 2N-CH 25v 0.5A sc70-6
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FDG6313N的详细信息

Datasheets:
FDG6313N:
Product Photos:
SOT-363 PKG:
PCN Design/Specification:
Mold Compound 12/Dec/2007:
Mold Compound 07/May/2008:
Standard Package : 3,000
Category: Discrete Semiconductor Products
Family: FETs - Arrays
Series: -
Packaging : Tape & Reel (TR)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 500mA
Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) @ Vgs: 2.3nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 50pF @ 10V
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6