Image FDD10AN06A0_F085
型号:

FDD10AN06A0_F085

厂商: Fairchild Semiconductor Fairchild Semiconductor
标准:
分类: 半导体分离式半导体
描述: mosfet 60v, 50a, 10.5mohm power trench mosfet
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FDD10AN06A0_F085的详细信息

Manufacturer: Fairchild Semiconductor
Product Category: MOSFET
RoHS: Yes
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 50 A
Rds On - Drain-Source Resistance: 9.4 mOhms
Configuration: Single
Vgs th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 28 nC
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 135 W
Mounting Style: SMD/SMT
Package / Case: DPAK-2
Packaging: Reel
Brand: Fairchild Semiconductor
Fall Time: 32 ns
Minimum Operating Temperature: - 55 C
Rise Time: 79 ns
Series: FDD10AN06A0
Factory Pack Quantity: 2500
Typical Turn-Off Delay Time: 32 ns
Unit Weight: 260.370 mg