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FDD10AN06A0_F085的详细信息
Manufacturer: | Fairchild Semiconductor |
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Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 50 A |
Rds On - Drain-Source Resistance: | 9.4 mOhms |
Configuration: | Single |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Qg - Gate Charge: | 28 nC |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 135 W |
Mounting Style: | SMD/SMT |
Package / Case: | DPAK-2 |
Packaging: | Reel |
Brand: | Fairchild Semiconductor |
Fall Time: | 32 ns |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 79 ns |
Series: | FDD10AN06A0 |
Factory Pack Quantity: | 2500 |
Typical Turn-Off Delay Time: | 32 ns |
Unit Weight: | 260.370 mg |
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