Image FDC2612_F095
型号:

FDC2612_F095

厂商: Fairchild Semiconductor Fairchild Semiconductor
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 200v 1.1A 6-ssot
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FDC2612_F095的详细信息

Datasheets:
FDC2612:
Product Photos:
PowerTrench Series:
PCN Design/Specification:
Mold Compound 08/April/2008:
Standard Package : 3,000
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: PowerTrench®
Packaging : Tape & Reel (TR)
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 725 mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) @ Vds: 234pF @ 100V
Power - Max: 800mW
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-SSOT

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