EPC8002TENGR的详细信息
Datasheets: | |
---|---|
EPC8002 Preliminary Datasheet: | |
eGaN®: | |
FET Brief: | |
Product Photos: | |
917-EPC800: | |
Mfg Application Notes: | |
Assembling eGaN®: | |
FETS: | |
Die Attach Procedure: | |
Die Removal Procedure: | |
Standard Package : | 2 |
Category: | Discrete Semiconductor Products |
Family: | FETs - Single |
Series: | eGaN® |
Packaging : | Tray |
FET Type: | GaNFET N-Channel, Gallium Nitride |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 65V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
Rds On (Max) @ Id, Vgs: | 530 mOhm @ 500mA, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) @ Vgs: | 0.141nC @ 32.5V |
Input Capacitance (Ciss) @ Vds: | 21pF @ 32.5V |
Power - Max: | - |
Mounting Type: | Surface Mount |
Package / Case: | Die |
Supplier Device Package: | Die |
Other Names: | 917-EPC8002AENGR917-EPC8002AENGR-ND917-EPC8002TENGREPC8002AENGR |
扫码手机查看更方便
同类器件