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型号:

EPC8002TENGR

厂商: EPC
标准:
分类: 半导体FET - 单
描述: trans gan 65v 2A bumped die
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EPC8002TENGR的详细信息

Datasheets:
EPC8002 Preliminary Datasheet:
eGaN®:
FET Brief:
Product Photos:
917-EPC800:
Mfg Application Notes:
Assembling eGaN®:
FETS:
Die Attach Procedure:
Die Removal Procedure:
Standard Package : 2
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: eGaN®
Packaging : Tray
FET Type: GaNFET N-Channel, Gallium Nitride
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 65V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 530 mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) @ Vgs: 0.141nC @ 32.5V
Input Capacitance (Ciss) @ Vds: 21pF @ 32.5V
Power - Max: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Other Names: 917-EPC8002AENGR917-EPC8002AENGR-ND917-EPC8002TENGREPC8002AENGR