EPC2021ENG的详细信息
Datasheets: | |
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EPC2021 Datasheet Preliminary: | |
Product Photos: | |
EPC202xENG: | |
Mfg Application Notes: | |
Fourth Generation eGaN®: | |
FETs: | |
Featured Product: | |
Gen 4 eGaN® FETs: | |
Standard Package : | 10 |
Category: | Discrete Semiconductor Products |
Family: | FETs - Single |
Series: | eGaN® |
Packaging : | Tray |
FET Type: | GaNFET N-Channel, Gallium Nitride |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 80V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Ta) |
Rds On (Max) @ Id, Vgs: | 2.5 mOhm @ 29A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 14mA |
Gate Charge (Qg) @ Vgs: | - |
Input Capacitance (Ciss) @ Vds: | 1700pF @ 40V |
Power - Max: | - |
Mounting Type: | Surface Mount |
Package / Case: | Die |
Supplier Device Package: | Die |
Dynamic Catalog: | N-Channel Logic Level Gate FETs |
For Use With: | 917-1068-ND - BOARD DEV EPC2001/21 EGAN917-1058-ND - BOARD DEV FOR EPC2021 80V EGAN |
Other Names: | 917-EPC2021ENGEPC2021ENGRB3 |
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