EM6M2T2R的详细信息
Manufacturer: | ROHM Semiconductor |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | ROHM Semiconductor |
Transistor Polarity: | N and P-Channel |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Vgs - Gate-Source Breakdown Voltage: | 10 V |
Id - Continuous Drain Current: | 200 mA |
Rds On - Drain-Source Resistance: | 700 mOhms |
Configuration: | Dual |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 150 mW |
Mounting Style: | SMD/SMT |
Package / Case: | EMT6 |
Packaging: | Reel |
Channel Mode: | Enhancement |
Fall Time: | 10 ns, 17 ns |
Forward Transconductance - Min: | 0.2 S |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 10 ns, 4 ns |
Factory Pack Quantity: | 8000 |
Typical Turn-Off Delay Time: | 15 ns, 17 ns |
扫码手机查看更方便
同类器件