Image DMN2029USD-13
型号:

DMN2029USD-13

厂商: Diodes Incorporated Diodes Incorporated
标准:
分类: 半导体FET - 阵列
描述: mosfet 2N-CH 20v 5.8A 8so
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DMN2029USD-13的详细信息

Datasheets:
DMN2029USD:
Product Photos:
8-SOIC:
8-SOIC:
RoHS Information:
RoHS Cert of Compliance:
Standard Package : 1
Category: Discrete Semiconductor Products
Family: FETs - Arrays
Series: -
Packaging : Cut Tape (CT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) @ Vgs: 18.6nC @ 8V
Input Capacitance (Ciss) @ Vds: 1171pF @ 10V
Power - Max: 1.2W
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Dynamic Catalog: N-Channel Logic Level Gate FETs
Other Names: DMN2029USD-13DICT