Image DMN10H120SFG-7
型号:

DMN10H120SFG-7

厂商: Diodes Incorporated Diodes Incorporated
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 100v 3.4A 8soic
报错 收藏

Datasheet下载地址

本地下载 >> 厂商下载 >>

DMN10H120SFG-7的详细信息

Datasheets:
DMN10H120SFG:
Product Photos:
8-PowerWDFN:
Standard Package : 2,000
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: -
Packaging : Tape & Reel (TR)
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 110 mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) @ Vgs: 10.6nC @ 10V
Input Capacitance (Ciss) @ Vds: 549pF @ 50V
Power - Max: 1W
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8
Dynamic Catalog: N-Channel Logic Level Gate FETs
Other Names: DMN10H120SFG-7DITR