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DMG4800LK3-13的详细信息
Manufacturer: | Diodes Incorporated |
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Product Category: | MOSFET |
RoHS: | Yes |
Brand: | Diodes Incorporated |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Id - Continuous Drain Current: | 10 A |
Rds On - Drain-Source Resistance: | 12 mOhms |
Qg - Gate Charge: | 8.7 nC |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 1.71 W |
Mounting Style: | SMD/SMT |
Package / Case: | DPAK-2 |
Packaging: | Reel |
Channel Mode: | Enhancement |
Fall Time: | 8.55 ns |
Forward Transconductance - Min: | 10 S |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 4.5 ns |
Series: | DMG4800L |
Typical Turn-Off Delay Time: | 26.33 ns |
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