Image CSD16322Q5
型号:

CSD16322Q5

厂商: Texas Instruments Texas Instruments
标准:
分类: 半导体分离式半导体
描述: mosfet N-channel nexfet pwr mosfets
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CSD16322Q5的详细信息

Manufacturer: Texas Instruments
Product Category: MOSFET
RoHS: Yes
Brand: Texas Instruments
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 25 V
Vgs - Gate-Source Breakdown Voltage: - 8 V, + 10 V
Id - Continuous Drain Current: 21 A
Rds On - Drain-Source Resistance: 4.6 mOhms
Configuration: Single Quad Drain Triple Source
Vgs th - Gate-Source Threshold Voltage: 1.1 V
Qg - Gate Charge: 6.8 nC
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 3.1 W
Mounting Style: SMD/SMT
Package / Case: VSON-8 Clip
Packaging: Reel
Fall Time: 3.7 ns
Forward Transconductance - Min: 106 S
Minimum Operating Temperature: - 55 C
Rise Time: 10.7 ns
Series: CSD16322Q5
Factory Pack Quantity: 2500
Tradename: NexFET
Typical Turn-Off Delay Time: 12.3 ns