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CSD16322Q5的详细信息
Manufacturer: | Texas Instruments |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | Texas Instruments |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 25 V |
Vgs - Gate-Source Breakdown Voltage: | - 8 V, + 10 V |
Id - Continuous Drain Current: | 21 A |
Rds On - Drain-Source Resistance: | 4.6 mOhms |
Configuration: | Single Quad Drain Triple Source |
Vgs th - Gate-Source Threshold Voltage: | 1.1 V |
Qg - Gate Charge: | 6.8 nC |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 3.1 W |
Mounting Style: | SMD/SMT |
Package / Case: | VSON-8 Clip |
Packaging: | Reel |
Fall Time: | 3.7 ns |
Forward Transconductance - Min: | 106 S |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 10.7 ns |
Series: | CSD16322Q5 |
Factory Pack Quantity: | 2500 |
Tradename: | NexFET |
Typical Turn-Off Delay Time: | 12.3 ns |
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