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NXP Semiconductors 
Datasheet下载地址
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BUK7Y12-55B,115的详细信息
| Manufacturer： | NXP |
|---|---|
| Product Category： | MOSFET |
| RoHS： | Yes |
| Transistor Polarity： | N-Channel |
| Vds - Drain-Source Breakdown Voltage： | 55 V |
| Id - Continuous Drain Current： | 61.8 A |
| Rds On - Drain-Source Resistance： | 8.2 mOhms |
| Mounting Style： | SMD/SMT |
| Package / Case： | LFPAK-4 |
| Packaging： | Reel |
| Brand： | NXP Semiconductors |
| Factory Pack Quantity： | 1500 |
BUK7Y12-55B,115相关文档
- Application note: LFPAK MOSFET thermal design guide - Part 2 (v.2.0)
- Brochure: Power MOSFETs for Automotive Applications; Performance, Quality, Reliability (v.1.0)
- SPICE model: BUK7Y12-55B SPICE model (v.2.0)
- Application note: LFPAK MOSFET thermal design guide (v.2.0)
- Selection guide: NXP's Power MOSFET Selection Guide 2012; Smaller, faster, cooler (v.2.1)
- Leaflet: High reliability LFPAK MOSFETs for Automotive Power Applications (v.1.1)
- Application note: Understanding Power MOSFET Datasheet Parameters (v.1.0)
- Thermal design: BUK7Y12-55B_RC_Thermal_Model (v.1.0)
- Thermal model: BUK7Y12-55B Thermal model (v.1.0)
- Leaflet: LFPAK - The Toughest Power SO8 (v.1.2)
- Application note: Power MOSFET single-shot and repetitive avalanche ruggedness rating (v.2.1)
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