Image BUK7626-100B,118
型号:

BUK7626-100B,118

厂商: NXP Semiconductors NXP Semiconductors
标准:
分类: 半导体分离式半导体
描述: mosfet high perf trenchmos
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BUK7626-100B,118的详细信息

Manufacturer: NXP
Product Category: MOSFET
RoHS: Yes
Brand: NXP Semiconductors
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 49 A
Rds On - Drain-Source Resistance: 26 mOhms
Configuration: Single
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 157 W
Mounting Style: SMD/SMT
Package / Case: SOT-404-3
Packaging: Reel
Channel Mode: Enhancement
Fall Time: 19 ns
Minimum Operating Temperature: - 55 C
Rise Time: 40 ns
Factory Pack Quantity: 800
Typical Turn-Off Delay Time: 47 ns
Part # Aliases: /T3 BUK7626-100B