NXP Semiconductors 
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BUK6E2R3-40C,127的详细信息
| Manufacturer： | NXP |
|---|---|
| Product Category： | MOSFET |
| RoHS： | Yes |
| Transistor Polarity： | N-Channel |
| Vds - Drain-Source Breakdown Voltage： | 40 V |
| Vgs - Gate-Source Breakdown Voltage： | 20 V |
| Id - Continuous Drain Current： | 120 A |
| Rds On - Drain-Source Resistance： | 2.3 mOhms |
| Configuration： | Single |
| Maximum Operating Temperature： | + 175 C |
| Pd - Power Dissipation： | 306 W |
| Mounting Style： | Through Hole |
| Package / Case： | TO-220-3 |
| Packaging： | Tube |
| Brand： | NXP Semiconductors |
| Minimum Operating Temperature： | - 55 C |
| Factory Pack Quantity： | 50 |
BUK6E2R3-40C,127相关文档
- Brochure: Leading-edge Automotive Power MOSFETs (v.1.0)
- Brochure: Power MOSFETs for Automotive Applications; Performance, Quality, Reliability (v.1.0)
- Thermal design: BUK6E2R3-40C RC Thermal Model (v.1.5)
- Application note: Understanding Power MOSFET Datasheet Parameters (v.1.0)
- Selection guide: NXP's Power MOSFET Selection Guide 2012; Smaller, faster, cooler (v.2.1)
- Thermal model: BUK6E2R3-40C Thermal model (v.1.0)
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