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BUK664R4-55C,118的详细信息
Manufacturer: | NXP |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 55 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 100 A |
Rds On - Drain-Source Resistance: | 4.4 mOhms |
Configuration: | Single |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 204 W |
Mounting Style: | SMD/SMT |
Package / Case: | D2PAK-2 |
Packaging: | Reel |
Brand: | NXP Semiconductors |
Minimum Operating Temperature: | - 55 C |
Factory Pack Quantity: | 800 |
BUK664R4-55C,118相关文档
- Selection guide: NXP's Power MOSFET Selection Guide 2012; Smaller, faster, cooler (v.2.1)
- Brochure: Leading-edge Automotive Power MOSFETs (v.1.0)
- SPICE model: BUK664R4-55C SPICE model (v.2.0)
- Brochure: Power MOSFETs for Automotive Applications; Performance, Quality, Reliability (v.1.0)
- Thermal model: BUK664R4-55C Thermal model (v.1.0)
- Application note: Understanding Power MOSFET Datasheet Parameters (v.1.0)
- Thermal design: BUK664R4-55C RC Thermal Model (v.2.0)
- PCN: Customer Information Notification
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