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BTS112A的详细信息
Manufacturer: | Infineon |
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Product Category: | MOSFET |
RoHS: | No |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 6.7 A |
Rds On - Drain-Source Resistance: | 150 mOhms |
Configuration: | Single |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 40 W |
Mounting Style: | Through Hole |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Brand: | Infineon Technologies |
Channel Mode: | Enhancement |
Fall Time: | 55 ns |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 30 ns |
Series: | BTS112 |
Factory Pack Quantity: | 500 |
Typical Turn-Off Delay Time: | 40 ns |
Part # Aliases: | BTS112ANKSA1 SP000011185 |
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