Image BSZ340N08NS3 G
型号:

BSZ340N08NS3 G

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体分离式半导体
描述: mosFET N-kanal power mos
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BSZ340N08NS3 G的详细信息

Manufacturer: Infineon
Product Category: MOSFET
RoHS: Yes
Brand: Infineon Technologies
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 80 V
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 23 A
Rds On - Drain-Source Resistance: 34 mOhms
Configuration: Single Quad Drain Triple Source
Vgs th - Gate-Source Threshold Voltage: 3.5 V
Qg - Gate Charge: 9.1 nC
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 2.1 W
Mounting Style: SMD/SMT
Package / Case: TSDSON-8
Packaging: Reel
Channel Mode: Enhancement
Fall Time: 2 ns
Forward Transconductance - Min: 16 S, 8 S
Minimum Operating Temperature: - 55 C
Rise Time: 3 ns
Series: BSZ340N08
Factory Pack Quantity: 5000
Tradename: OptiMOS
Typical Turn-Off Delay Time: 11 ns
Part # Aliases: BSZ340N08NS3GATMA1 SP000443634