Image BSZ042N06NS
型号:

BSZ042N06NS

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 60v 19a 8tsdson
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BSZ042N06NS的详细信息

Datasheets:
BSZ042N06NS:
Product Photos:
8-TSDSON:
Standard Package : 5,000
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: OptiMOS™
Packaging : Tape & Reel (TR)
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Gate Charge (Qg) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) @ Vds: 2000pF @ 30V
Power - Max: 2.5W
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TSDSON-8 (3.3x3.3)
Other Names: BSZ042N06NSATMA1BSZ042N06NSTRSP000917418