Image BSZ018NE2LSIXT
型号:

BSZ018NE2LSIXT

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体分离式半导体
描述: mosfet optimos power mosfet
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BSZ018NE2LSIXT的详细信息

Manufacturer: Infineon
Product Category: MOSFET
RoHS: Yes
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 25 V
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 40 A
Rds On - Drain-Source Resistance: 1.8 mOhms
Configuration: Single Quad Drain Triple Source
Vgs th - Gate-Source Threshold Voltage: 1.2 V to 2 V
Qg - Gate Charge: 39 nC
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 69 W
Mounting Style: SMD/SMT
Package / Case: TSDSON-8
Packaging: Reel
Brand: Infineon Technologies
Fall Time: 3.4 ns
Forward Transconductance - Min: 140 S
Minimum Operating Temperature: - 55 C
Rise Time: 4.4 ns
Series: BSZ018NE2
Factory Pack Quantity: 5000
Tradename: OptiMOS
Typical Turn-Off Delay Time: 26 ns
Part # Aliases: BSZ018NE2LSIATMA1 SP000906032