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BSS84AKM,315的详细信息
Manufacturer: | NXP |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | P-Channel |
Vds - Drain-Source Breakdown Voltage: | - 50 V |
Id - Continuous Drain Current: | - 230 mA |
Rds On - Drain-Source Resistance: | 7.5 Ohms |
Qg - Gate Charge: | 0.35 nC |
Pd - Power Dissipation: | 340 mW |
Mounting Style: | SMD/SMT |
Package / Case: | DFN1006B-3 |
Packaging: | Reel |
Brand: | NXP Semiconductors |
Forward Transconductance - Min: | 150 mS |
Factory Pack Quantity: | 10000 |
BSS84AKM,315相关文档
- S-parameter: BSS84AKM_4_7_2011 Spice parameter (v.1.0)
- Selection guide: NXP's Power MOSFET Selection Guide 2012; Smaller, faster, cooler (v.2.1)
- Line card: Broad small-signal MOSFET portfolio to suit a wide range of applications (v.2.0)
- Application note: Understanding Power MOSFET Datasheet Parameters (v.1.0)
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