Image BSS214N L6327
型号:

BSS214N L6327

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 20v 1.5A sot-23
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BSS214N L6327的详细信息

Datasheets:
BSS214N:
Product Photos:
SOT-23-3:
PCN Obsolescence/ EOL:
Multiple Devices 25/Nov/2011:
Standard Package : 3,000
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: OptiMOS™
Packaging : Tape & Reel (TR)
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Gate Charge (Qg) @ Vgs: 0.8nC @ 5V
Input Capacitance (Ciss) @ Vds: 143pF @ 10V
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3
Other Names: BSS214NL6327HTSA1SP000440878