NXP Semiconductors 
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BSH205,215的详细信息
| Manufacturer： | NXP |
|---|---|
| Product Category： | MOSFET |
| RoHS： | Yes |
| Brand： | NXP Semiconductors |
| Transistor Polarity： | P-Channel |
| Vds - Drain-Source Breakdown Voltage： | - 12 V |
| Vgs - Gate-Source Breakdown Voltage： | 8 V |
| Id - Continuous Drain Current： | 750 mA |
| Rds On - Drain-Source Resistance： | 180 mOhms |
| Configuration： | Single |
| Maximum Operating Temperature： | + 150 C |
| Pd - Power Dissipation： | 417 mW |
| Mounting Style： | SMD/SMT |
| Package / Case： | SOT-23-3 |
| Packaging： | Reel |
| Channel Mode： | Enhancement |
| Fall Time： | 4.5 ns |
| Minimum Operating Temperature： | - 55 C |
| Rise Time： | 4.5 ns |
| Factory Pack Quantity： | 3000 |
| Typical Turn-Off Delay Time： | 45 ns |
| Part # Aliases： | BSH205 T/R |
BSH205,215相关文档
- Selection guide: NXP's Power MOSFET Selection Guide 2012; Smaller, faster, cooler (v.2.1)
- SPICE model: BSH205 SPICE model (v.1.3)
- Application note: Understanding Power MOSFET Datasheet Parameters (v.1.0)
- Line card: Broad small-signal MOSFET portfolio to suit a wide range of applications (v.2.0)
- PCN: Customer Information Notification
- EOL: Discontinuation Notification
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