Image BSC0901NSI
型号:

BSC0901NSI

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 30v 28a 8tdson
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BSC0901NSI的详细信息

Datasheets:
BSC0901NSI:
Product Photos:
8-PowerTDFN:
Standard Package : 1
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: OptiMOS™
Packaging : Cut Tape (CT)
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) @ Vgs: 20nC @ 15V
Input Capacitance (Ciss) @ Vds: 2600pF @ 15V
Power - Max: 69W
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8
Dynamic Catalog: N-Channel Logic Level Gate FETs
Other Names: BSC0901NSICT