Image BSC076N06NS3 G
型号:

BSC076N06NS3 G

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体分离式半导体
描述: mosfet optimos2 pwr transistor N-CH
PDF: 预览
报错 收藏

BSC076N06NS3 G的详细信息

Manufacturer: Infineon
Product Category: MOSFET
RoHS: Yes
Brand: Infineon Technologies
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 50 A
Rds On - Drain-Source Resistance: 7.6 mOhms
Configuration: Single Quad Drain Triple Source
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 2.5 W
Mounting Style: SMD/SMT
Package / Case: TDSON-8
Packaging: Reel
Channel Mode: Enhancement
Fall Time: 5 ns
Minimum Operating Temperature: - 55 C
Rise Time: 40 ns
Series: BSC076N06
Factory Pack Quantity: 5000
Tradename: OptiMOS
Typical Turn-Off Delay Time: 20 ns
Part # Aliases: BSC076N06NS3GATMA1 SP000453656