Image BSC014N06NSATMA1
型号:

BSC014N06NSATMA1

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体分离式半导体
描述: mosFET MV power mos
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BSC014N06NSATMA1的详细信息

Manufacturer: Infineon
Product Category: MOSFET
RoHS: Yes
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 100 A
Rds On - Drain-Source Resistance: 1.45 mOhms
Configuration: Single Quad Drain
Vgs th - Gate-Source Threshold Voltage: 2.8 V
Qg - Gate Charge: 89 nC
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 156 W
Mounting Style: SMD/SMT
Package / Case: TDSON-8
Packaging: Reel
Brand: Infineon Technologies
Fall Time: 11 ns
Forward Transconductance - Min: 150 S
Minimum Operating Temperature: - 55 C
Rise Time: 10 ns
Series: BSC014N06
Factory Pack Quantity: 5000
Tradename: OptiMOS
Typical Turn-Off Delay Time: 43 ns
Part # Aliases: SP000924886