型号: | BLF881,112 |
厂商: |
NXP Semiconductors |
标准: | |
分类: | 半导体 , 分离式半导体 |
描述: | transistors RF mosfet uhf power ldmos transistor |
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Datasheet下载地址
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BLF881,112的详细信息
Manufacturer: | NXP |
---|---|
Product Category: | Transistors RF MOSFET |
RoHS: | Yes |
Configuration: | Single |
Transistor Polarity: | N-Channel |
Frequency: | 1 GHz |
Gain: | 21 dB at 858 MHz |
Output Power: | 33 W |
Vds - Drain-Source Breakdown Voltage: | 104 V |
Id - Continuous Drain Current: | 21 A |
Vgs - Gate-Source Breakdown Voltage: | 13 V |
Maximum Operating Temperature: | + 150 C |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-467C |
Packaging: | Tube |
Brand: | NXP Semiconductors |
Factory Pack Quantity: | 20 |
Vgs th - Gate-Source Threshold Voltage: | 2.4 V |
BLF881,112相关文档
- Application note: 174 MHz to 230 MHz DVB-T power amplifier with the BLF881 (v.1.0)
- Simulation model: RF Power Model Library Manual and Installation Instructions for MicroWave Office (v.3.2)
- Brochure: Your partner in Mobile Communication Infrastructure design; High Performance RF for wireless infrastructure (v.1.0)
- Leaflet: RF power UHF/DVB-T broadcasting at its best (v.1.0)
- Leaflet: NXP 50 V LDMOS RF power transistors BLF881x and BLF888A for Digital Broadcasting (v.1.0)
- Mounting and soldering: Fatigue in aluminum bond wires (v.1.0)
- Selection guide: NXP's RF Manual 16th edition (v.1.0)
- Simulation model: RF Power Model Library for MicroWave Office (v.2.2)
- Application note: Mounting and Soldering of RF transistors (v.1.0)
- Other type: PCB Design BLF881(S) (Data sheet) (v.1.1)
- Other type: PCB Design BLF881(S) (AN10945) (v.2.3)
- Simulation model: BLF881 ADS Model (v.1.1)
- Simulation model: RF Power Simulation Example for MicroWave Office (v.1.0)
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