型号: | BLF7G21L-160P,112 |
厂商: |
NXP Semiconductors |
标准: | |
分类: | 半导体 , 分离式半导体 |
描述: | transistors RF mosfet power ldmos transistor |
报错 收藏 赞 |
Datasheet下载地址
本地下载 >> 厂商下载2 >> 第三方平台下载 >> |
BLF7G21L-160P,112的详细信息
Manufacturer: | NXP |
---|---|
Product Category: | Transistors RF MOSFET |
RoHS: | Yes |
Configuration: | Dual |
Transistor Polarity: | N-Channel |
Frequency: | 1.8 GHz to 2.05 GHz |
Gain: | 18 dB |
Output Power: | 50 W |
Vds - Drain-Source Breakdown Voltage: | 65 V |
Id - Continuous Drain Current: | 32.5 A |
Vgs - Gate-Source Breakdown Voltage: | 13 V |
Maximum Operating Temperature: | + 150 C |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-1121A |
Packaging: | Tube |
Brand: | NXP Semiconductors |
Factory Pack Quantity: | 20 |
Vgs th - Gate-Source Threshold Voltage: | 1.9 V |
BLF7G21L-160P,112相关文档
- Selection guide: NXP's RF Manual 16th edition (v.1.0)
- Brochure: Your partner in Mobile Communication Infrastructure design; High Performance RF for wireless infrastructure (v.1.0)
- Application note: 1805 MHz to 1880 MHz asymmetrical Doherty amplifier with the BLF7G20LS-90P and BLF7G21LS-160P (v.1.0)
- Mounting and soldering: Fatigue in aluminum bond wires (v.1.0)
- Application note: Mounting and Soldering of RF transistors (v.1.0)
- Other type: PCB Design BLF7G21L(S)-160(P) (Data sheet) (v.1.0)
- Other type: PCB Design BLF7G20L(S)-90P BLF7G21L(S)-160P (AN10951) (v.2.2)
- Simulation model: BLF7G21L-160P ADS Model (v.1.0)
扫码手机查看更方便
同类器件