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NXP Semiconductors 
Datasheet下载地址
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BLF7G20LS-200,118的详细信息
| Manufacturer： | NXP |
|---|---|
| Product Category： | Transistors RF MOSFET |
| RoHS： | Yes |
| Configuration： | Single |
| Transistor Polarity： | N-Channel |
| Frequency： | 1.8 GHz to 1.99 GHz |
| Gain： | 18 dB |
| Output Power： | 55 W |
| Vds - Drain-Source Breakdown Voltage： | 65 V |
| Id - Continuous Drain Current： | 50.6 A |
| Vgs - Gate-Source Breakdown Voltage： | 13 V |
| Maximum Operating Temperature： | + 150 C |
| Mounting Style： | SMD/SMT |
| Package / Case： | SOT-502B |
| Packaging： | Reel |
| Brand： | NXP Semiconductors |
| Rds On - Drain-Source Resistance： | 93 mOhms |
| Factory Pack Quantity： | 100 |
| Vgs th - Gate-Source Threshold Voltage： | 1.9 V |
BLF7G20LS-200,118相关文档
- Simulation model: RF Power Simulation Example for MicroWave Office (v.1.0)
- Selection guide: NXP's RF Manual 16th edition (v.1.0)
- Other type: PCB Design BLF7G20L(S)-200 (AN10921) (v.2.1)
- Simulation model: RF Power Model Library for MicroWave Office (v.2.2)
- Application note: Mounting and Soldering of RF transistors (v.1.0)
- Simulation model: BLF7G20-200 ADS Model (v.1.0)
- Other type: PCB Design BLF7G20L(S)-200 (AN10944) (v.2.1)
- Application note: BLF7G20LS-200 Doherty 1.805-1.88 GHz RF power amplifier (v.1.0)
- Simulation model: RF Power Model Library Manual and Installation Instructions for MicroWave Office (v.3.2)
- Brochure: Your partner in Mobile Communication Infrastructure design; High Performance RF for wireless infrastructure (v.1.0)
- Mounting and soldering: Fatigue in aluminum bond wires (v.1.0)
- Application note: 1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 (v.1.0)
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