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| 型号： | BLF6G21-10G,112 |
| 厂商： |
 NXP Semiconductors |
| 标准： |   |
| 分类： | 半导体 ， 分离式半导体 |
| 描述： | transistors RF mosfet transistor pwr ldmos |
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Datasheet下载地址
| 本地下载 >> 厂商下载2 >> 第三方平台下载 >> |
BLF6G21-10G,112的详细信息
| Manufacturer： | NXP |
|---|---|
| Product Category： | Transistors RF MOSFET |
| RoHS： | Yes |
| Configuration： | Single |
| Transistor Polarity： | N-Channel |
| Frequency： | 2.2 GHz |
| Gain： | 18.5 dB |
| Output Power： | 0.7 W |
| Vds - Drain-Source Breakdown Voltage： | 65 V |
| Id - Continuous Drain Current： | 3.1 A |
| Vgs - Gate-Source Breakdown Voltage： | 13 V |
| Maximum Operating Temperature： | + 150 C |
| Mounting Style： | SMD/SMT |
| Package / Case： | SOT-538A |
| Packaging： | Tube |
| Brand： | NXP Semiconductors |
| Factory Pack Quantity： | 20 |
| Vgs th - Gate-Source Threshold Voltage： | 1.9 V |
BLF6G21-10G,112相关文档
- Simulation model: BLF6G21-10G ADS Model (v.1.0)
- Brochure: Your partner in Mobile Communication Infrastructure design; High Performance RF for wireless infrastructure (v.1.0)
- Application note: Mounting and Soldering of RF transistors (v.1.0)
- Selection guide: NXP's RF Manual 16th edition (v.1.0)
- Mounting and soldering: Fatigue in aluminum bond wires (v.1.0)
- Simulation model: RF Power Model Library for MicroWave Office (v.2.2)
- Simulation model: RF Power Simulation Example for MicroWave Office (v.1.0)
- Simulation model: RF Power Model Library Manual and Installation Instructions for MicroWave Office (v.3.2)
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