型号: | BLF6G20LS-140,112 |
厂商: |
NXP Semiconductors |
标准: | |
分类: | 半导体 , 分离式半导体 |
描述: | transistors RF mosfet ldmos tns |
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Datasheet下载地址
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BLF6G20LS-140,112的详细信息
Manufacturer: | NXP |
---|---|
Product Category: | Transistors RF MOSFET |
RoHS: | Yes |
Brand: | NXP Semiconductors |
Configuration: | Single |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 65 V |
Id - Continuous Drain Current: | 13 A |
Vgs - Gate-Source Breakdown Voltage: | 13 V |
Maximum Operating Temperature: | + 150 C |
Mounting Style: | SMD/SMT |
Package / Case: | SOT502B |
Packaging: | Tube |
Minimum Operating Temperature: | - 65 C |
Rds On - Drain-Source Resistance: | 200 mOhms |
Factory Pack Quantity: | 20 |
Part # Aliases: | BLF6G20LS-140 |
BLF6G20LS-140,112相关文档
- Selection guide: NXP's RF Manual 16th edition (v.1.0)
- Brochure: Your partner in Mobile Communication Infrastructure design; High Performance RF for wireless infrastructure (v.1.0)
- Mounting and soldering: Fatigue in aluminum bond wires (v.1.0)
- Application note: Mounting and Soldering of RF transistors (v.1.0)
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