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BLF6G10-160RN,112的详细信息
Manufacturer: | NXP |
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Product Category: | Transistors RF MOSFET |
RoHS: | Yes |
Configuration: | Single |
Transistor Polarity: | N-Channel |
Frequency: | 0.7 GHz to 1 GHz |
Gain: | 22.5 dB |
Output Power: | 32 W |
Vds - Drain-Source Breakdown Voltage: | 65 V |
Id - Continuous Drain Current: | 39 A |
Vgs - Gate-Source Breakdown Voltage: | +/- 13 V |
Maximum Operating Temperature: | + 150 C |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-502A |
Packaging: | Tube |
Brand: | NXP Semiconductors |
Factory Pack Quantity: | 20 |
Vgs th - Gate-Source Threshold Voltage: | 1.9 V |
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