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BLF245,112的详细信息
Manufacturer: | NXP |
---|---|
Product Category: | Transistors RF MOSFET |
RoHS: | Yes |
Brand: | NXP Semiconductors |
Configuration: | Single |
Transistor Polarity: | N-Channel |
Frequency: | 175 MHz |
Gain: | 15.5 dB |
Output Power: | 30 W |
Vds - Drain-Source Breakdown Voltage: | 65 V |
Id - Continuous Drain Current: | 6 A |
Vgs - Gate-Source Breakdown Voltage: | +/- 20 V |
Maximum Operating Temperature: | + 150 C |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-123A |
Packaging: | Tube |
Minimum Operating Temperature: | - 65 C |
Pd - Power Dissipation: | 68 W |
Product Type: | RF MOSFET Power |
Rds On - Drain-Source Resistance: | 750 mOhms |
Factory Pack Quantity: | 20 |
Vgs th - Gate-Source Threshold Voltage: | 4.5 V |
Part # Aliases: | BLF245 |
BLF245,112相关文档
- Application note: Mounting and Soldering of RF transistors (v.1.0)
- Line card: PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS (v.1.1)
- Brochure: Your partner in Mobile Communication Infrastructure design; High Performance RF for wireless infrastructure (v.1.0)
- SPICE model: BLF245_14V_50mA SPICE model (v.1.3)
- Selection guide: NXP's RF Manual 16th edition (v.1.0)
- Mounting and soldering: Fatigue in aluminum bond wires (v.1.0)
- SPICE model: BLF245_28V_50mA SPICE model (v.1.3)
- Application note: A wideband power amplifier (25-110 MHz) with the MOS transistor BLF245 315 (v.1.0)
- SPICE model: BLF245_12_5V_50mA SPICE model (v.1.3)
- EOL: Customer Information Notification
- EOL: Discontinuation Notification
- PCN: Customer Information Notification
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