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NXP Semiconductors 
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BLF147,112的详细信息
| Manufacturer： | NXP |
|---|---|
| Product Category： | Transistors RF MOSFET |
| RoHS： | Yes |
| Brand： | NXP Semiconductors |
| Configuration： | Single |
| Transistor Polarity： | N-Channel |
| Frequency： | 28 MHz |
| Gain： | 19 dB |
| Output Power： | 150 W |
| Vds - Drain-Source Breakdown Voltage： | 65 V |
| Id - Continuous Drain Current： | 25 A |
| Vgs - Gate-Source Breakdown Voltage： | +/- 20 V |
| Maximum Operating Temperature： | + 150 C |
| Mounting Style： | SMD/SMT |
| Package / Case： | SOT-121B |
| Packaging： | Tube |
| Minimum Operating Temperature： | - 65 C |
| Pd - Power Dissipation： | 220 W |
| Product Type： | RF MOSFET Power |
| Rds On - Drain-Source Resistance： | 150 mOhms |
| Factory Pack Quantity： | 20 |
| Vgs th - Gate-Source Threshold Voltage： | 4.5 V |
| Part # Aliases： | BLF147 |
BLF147,112相关文档
- Brochure: Your partner in Mobile Communication Infrastructure design; High Performance RF for wireless infrastructure (v.1.0)
- Selection guide: NXP's RF Manual 16th edition (v.1.0)
- SPICE model: BLF147_14V_1000mA SPICE model (v.1.3)
- Line card: PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS (v.1.1)
- SPICE model: BLF147_28V_1000mA SPICE model (v.1.3)
- Mounting and soldering: Fatigue in aluminum bond wires (v.1.0)
- Application note: Mounting and Soldering of RF transistors (v.1.0)
- EOL: Customer Information Notification
- EOL: Discontinuation Notification
- PCN: Customer Information Notification
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