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NXP Semiconductors 
Datasheet下载地址
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BLD6G22LS-50,112的详细信息
| Manufacturer： | NXP |
|---|---|
| Product Category： | MOSFET |
| RoHS： | Yes |
| Transistor Polarity： | N-Channel |
| Vds - Drain-Source Breakdown Voltage： | 65 V |
| Id - Continuous Drain Current： | 10.2 A |
| Rds On - Drain-Source Resistance： | 0.52 Ohms |
| Package / Case： | ACC-4 |
| Packaging： | Tube |
| Brand： | NXP Semiconductors |
| Factory Pack Quantity： | 20 |
BLD6G22LS-50,112相关文档
- Application note: Mounting and Soldering of RF transistors (v.1.0)
- Selection guide: NXP's RF Manual 16th edition (v.1.0)
- Brochure: Your partner in Mobile Communication Infrastructure design; High Performance RF for wireless infrastructure (v.1.0)
- Simulation model: RF Power Model Library Manual and Installation Instructions for MicroWave Office (v.3.2)
- Mounting and soldering: Fatigue in aluminum bond wires (v.1.0)
- Simulation model: RF Power Simulation Example for MicroWave Office (v.1.0)
- Simulation model: RF Power Model Library for MicroWave Office (v.2.2)
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