型号: | BFP 740 H6327 |
厂商: |
Infineon Technologies |
标准: | |
分类: | 半导体 , 分离式半导体 |
描述: | transistors RF bipolar RF bip transistor |
报错 收藏 赞 |
Datasheet下载地址
本地下载 >> 厂商下载2 >> 第三方平台下载 >> |
BFP 740 H6327的详细信息
Manufacturer: | Infineon |
---|---|
Product Category: | Transistors RF Bipolar |
RoHS: | Yes |
Brand: | Infineon Technologies |
Type: | RF Silicon Germanium |
Transistor Polarity: | NPN |
DC Collector/Base Gain hfe Min: | 160 |
Maximum Operating Frequency: | 42 GHz |
Collector- Emitter Voltage VCEO Max: | 4 V |
Emitter- Base Voltage VEBO: | 1.2 V |
Continuous Collector Current: | 30 mA |
Maximum Operating Temperature: | + 150 C |
Power Dissipation: | 160 mW |
Configuration: | Single Dual Emitter |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-343 |
Packaging: | Reel |
Minimum Operating Temperature: | - 65 C |
Series: | BFP740 |
Factory Pack Quantity: | 3000 |
Part # Aliases: | BFP740H6327XTSA1 SP000750414 |
扫码手机查看更方便
同类器件