ON Semiconductor 
BDV65B的详细信息
| Datasheets： | |
|---|---|
| BDV64,65B： | |
| Product Photos： | |
| TO-218： | |
| PCN Obsolescence/ EOL： | |
| Multiple Devices 06/Oct/2006： | |
| Standard Package ： | 30 |
| Category： | Discrete Semiconductor Products |
| Family： | Transistors (BJT) - Single |
| Series： | - |
| Packaging ： | Tube |
| Transistor Type： | NPN - Darlington |
| Current - Collector (Ic) (Max)： | 10A |
| Voltage - Collector Emitter Breakdown (Max)： | 100V |
| Vce Saturation (Max) @ Ib, Ic： | 2V @ 20mA, 5A |
| Current - Collector Cutoff (Max)： | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce： | 1000 @ 5A, 4V |
| Power - Max： | 125W |
| Frequency - Transition： | - |
| Mounting Type： | Through Hole |
| Package / Case： | TO-218-3 |
| Supplier Device Package： | SOT-93 |
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