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Bourns Inc. 
Datasheet下载地址
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BD649-S的详细信息
| Datasheets： | |
|---|---|
| BD645/47/49/51： | |
| Standard Package ： | 50 |
| Category： | Discrete Semiconductor Products |
| Family： | Transistors (BJT) - Single |
| Series： | - |
| Packaging ： | Tube |
| Transistor Type： | NPN - Darlington |
| Current - Collector (Ic) (Max)： | 8A |
| Voltage - Collector Emitter Breakdown (Max)： | 100V |
| Vce Saturation (Max) @ Ib, Ic： | 2.5V @ 50mA, 5A |
| Current - Collector Cutoff (Max)： | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce： | 750 @ 3A, 3V |
| Power - Max： | 2W |
| Frequency - Transition： | - |
| Mounting Type： | Through Hole |
| Package / Case： | TO-220-3 |
| Supplier Device Package： | TO-220 |
| Other Names： | BD649S |
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