型号:

BCR 112T E6327

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体晶体管(BJT) - 单路﹐预偏压式
描述: trans prebias npn 250mw sc75
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BCR 112T E6327的详细信息

Datasheets:
BCR112 (2003):
Standard Package : 3,000
Category: Discrete Semiconductor Products
Family: Transistors (BJT) - Single, Pre-Biased
Series: -
Packaging : Tape & Reel (TR)
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 140MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75
Other Names: BCR112TE6327XTSP000014126