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BCP51-10,135的详细信息
Manufacturer: | NXP |
---|---|
Product Category: | Transistors Bipolar - BJT |
RoHS: | Yes |
Brand: | NXP Semiconductors |
Configuration: | Single |
Transistor Polarity: | PNP |
Collector- Base Voltage VCBO: | 45 V |
Collector- Emitter Voltage VCEO Max: | 45 V |
Emitter- Base Voltage VEBO: | 5 V |
Maximum DC Collector Current: | 1 A |
Gain Bandwidth Product fT: | 145 MHz |
Maximum Operating Temperature: | + 150 C |
Package / Case: | SOT-223 |
DC Collector/Base Gain hfe Min: | 63 at 150 mA at 2 V |
Maximum Power Dissipation: | 1 W |
Minimum Operating Temperature: | - 55 C |
Packaging: | Reel |
Factory Pack Quantity: | 4000 |
Part # Aliases: | /T3 BCP51-10 |
BCP51-10,135相关文档
- Application note: Increased circuit efficiency, less required board space and saved money by replacing power transistors with low VCEsat (BISS) transistors (v.1.0)
- Application note: Medium Power Transistors and Rectifiers for Power Management Applications (v.1.0)
- SPICE model: BCP51_10 SPICE model (v.1.3)
- Other type: Cad-Symbol of BCP51 (v.1.0)
- Other type: Letter Symbols - Transistors; General (v.1.0)
- Other type: Power Derating Curves for SMDs; General (v.1.0)
- Line card: Medium power general purpose transistors (v.1.0)
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